SI7703EDN-T1-GE3
RoHS

SI7703EDN-T1-GE3

SI7703EDN-T1-GE3

Vishay

MOSFET P-CH 20V 4.3A 1212-8 PPAK

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SI7703EDN-T1-GE3

Spot quantity: 11550
Pricing
QTY UNIT PRICE EXT PRICE
1 0.38
10 0.3724
100 0.361
1000 0.3496
10000 0.3344
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Products Specifications
RoHSCompliant
MountSurface Mount
Fall Time6 ns
Rise Time6 ns
REACH SVHCNo SVHC
Rds On Max48 mΩ
Number of Pins8
Power Dissipation1.3 W
Threshold Voltage-1 V
Turn-On Delay Time4 ns
Radiation HardeningNo
Turn-Off Delay Time23 ns
Max Power Dissipation1.3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance41 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)4.3 A
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage20 V